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Advanced Packaging / Flip Chip

Flip chip, fully characterized.

C4 solder, C2 copper-pillar, and Au-stud interconnect with capillary or no-flow underfill — wafer-level, panel-level, and die-direct. One engineering team owns the part from design-rule review through qualified volume, on US soil.

/ ±2.5µm @3σ placement / SPC-controlled / MIL-STD when required / ITAR-aware

Macro cross-section of a die edge and substrate interface

Proof, from real flip-chip builds

>900

Bumps in a single C4 package · 100µm pitch · SAC305 · 100% production yield

C4 · C2

C4, C2, and Au-stud bump options

100µm

100-micron bump pitch, proven in production

Full process detail and design rules available under NDA.

Flip-chip solder-bump array on an AlN RF substrate

Bump & interconnect

Pick by pitch. All in-house.

Three bump types, two underfill flows, and four die-attach targets — the full flip-chip menu runs under one roof, so the right interconnect gets chosen at design review, not forced by what a vendor can do.

Above ~100 I/O the question stops being interesting: flip chip is the path. Below it, we still flip-chip when parasitic inductance, thermal dissipation, or footprint drive the call.

  • 01C4 solder bump — SAC305 mass-reflow workhorse for >130µm pitch. Self-aligning under reflow; underfill on laminate.
  • 02C2 copper pillar — fine-pitch wafer-level interconnect below ~130µm, one reflow handles flip-chip and SMD together.
  • 03Au-stud bump — thermocompression-bonded to diced die. No wafer-level bumping required — the move for known-good-die, low-volume, and R&D test vehicles.
  • 04Capillary underfill — dispensed after reflow, drawn under the die, then cured. Most predictable fill; our production default.
  • 05No-flow underfill — applied before placement and cured through reflow to compress the process flow where it fits the design.
  • 06Die-to-wafer / die / substrate / PCB — flip-chip attach across all four targets, wafer-level and panel-level.

Substrate by routing density — laminate (BT, FR-4 hi-Tg, polyimide) · co-fired ceramic for hi-rel · thin film when escape routing dictates <50µm trace pitch.

Placement is a data problem.

Flip chip lives or dies on placement accuracy and solder-flow control. We hold ±2.5µm at 3σ on BESI Datacon and Tresky die-attach platforms, with the process under SPC from the first prototype unit.

Mass reflow, thermocompression, and hybrid attach all run here. Fluxless options keep flux residue and post-attach cleaning out of hermetic and RF parts. Every joint is verified — the same x-ray, cross-section, die-shear, and ball-shear that sit on the production line also sit on the prototype line.

Place

±2.5µm @3σ

BESI Datacon & Tresky, SPC-monitored from unit one.

Attach

Reflow / TC / hybrid

Mass reflow, thermocompression, and hybrid attach — fluxless when the part demands it.

Verify

X-ray & cross-section

Void analysis, die shear, ball shear — prototype line runs the same checks as volume.

Case studies

Outcomes, not adjectives.

Three builds from the Heisler line. Names withheld; numbers are real and measured.

02 · Aviation interposer

SAC305

Fluxless SAC305, capillary & no-flow underfill

High-frequency aviation interposers, 50 per panel, 80µm SAC305 bumps, 60+ joints each — panel-level at 100% yield for an A&D program.

  • Bump dia.80µm
  • FormatPanel-level
  • Yield100%

03 · Fluxless on AlN

Underfill

Capillary & no-flow underfill, fluxless SAC305

Maskless AlN substrate, 4× CMOS flip chip at 118 I/O each (472 joints/board). Fluxless single-pass reflow under SPC kept molten alloy in place with no solder mask — 100% post-reflow.

  • SubstrateAlN
  • I/O / die118
  • Yield100%

Build data, x-ray imagery, and design rules available under NDA.

Bumped die measured under metrology

Inspection & metrology

If we can't measure it, we don't ship it.

Every flip-chip joint is characterized. X-ray void analysis on Creative Electron, cross-section and failure analysis on Keyence, die shear, and ball shear — the data that proves the joint and feeds the next process iteration.

Voids, bridging, head-in-pillow, and underfill coverage all get caught before they become a field return. See the data engine behind every build on our inspection & metrology page.

Built for the hard ones.

Aerospace & Defense

Qualified, US-soil, ITAR-aware

Co-fired ceramic, hermetic, MIL-STD qualification when required. Panel-level interposers and high-reliability flip chip on domestic capacity. See aerospace & defense packaging.

RF / mmWave

Short paths, low parasitics

Flip chip on AlN and thin-film substrates, fluxless reflow, sub-50µm escape routing where the design demands it. See RF & mmWave packaging.

Flip chip is the floor for 2.5D and 3D. Every interposer stack reduces to flip-chip-style bumping at the die-to-interposer interface — explore advanced packaging and 3D heterogeneous integration.

Flip-chip FAQ

Questions engineers actually ask.

Do you flip-chip diced die without wafer-level bumping?

Yes. Au-stud bumping from a modified wirebonder lets us bond diced, known-good die directly to the substrate — the standard path for KGD-only programs, low-volume, repair, and university test vehicles where the wafer was never bumped at fab.

C4 or C2 — how do you choose?

By pitch and tolerance. C4 solder ball is the mass-reflow workhorse above ~130µm. Below that, C2 copper pillar gives finer placement and lets one reflow handle flip-chip and SMD together. We settle this at design review, before tape-out.

Capillary or no-flow underfill?

Capillary is our production default — dispensed after reflow and drawn under the die for the most predictable fill. No-flow compresses the flow by applying underfill before placement and curing through reflow; we pick the one that fits the die, substrate, and volume.

What placement accuracy do you hold?

±2.5µm at 3σ on BESI Datacon and Tresky die-attach platforms, SPC-controlled from the first prototype unit through volume.

Can you build on AlN, ceramic, or thin-film substrates?

Yes — laminate, co-fired ceramic, and thin film. We have run fluxless, maskless SAC305 reflow on AlN at 118 I/O per die at 100% post-reflow yield. Substrate is chosen by routing density at design review.

Process More.

Bring us the flip chip
that has to work.

One team, design-rule review through qualified volume. Request a capability brief for flip-chip design rules, full process detail, and build data under NDA.

Request a Capability Brief

/ US-soil / ITAR-aware / MIL-STD